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],
property: {
type: String,
uuid: UUID,
},
children: [],
};
let property: PropertyTree = {
type: {
value: “Property”,
uuid: UUID,
},
value: “value”,
};
let propertyB: PropertyTree = {
type: {
value: “Property”,
uuid: UUID,
},
value: 42,
};

// Our parent node’s value is a list, but its children are of type Number
let parent = {
type: {
value: “List”,
uuid: UUID,
},
value: [“value”],
};

let children = [
{
type: {
value: “Property”,
uuid: UUID,
},
children: [property],
name: “”,
},
{
type: {
value: “Property”,
uuid: UUID,
},

System Requirements:

Windows 7/8/8.1/10/10.1 32-bit and 64-bit

Processor: Intel x64 (AMD64 is recommended)

Memory: 256MB RAM

Hard disk: 512MB free space

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A driver for the gaming monitor, NVIDIA® GTX 1050 or AMD® Radeon RX 564 or newerÂ, Nvidia® 358.05 or AMD® 340 or newerÂ, Intel® I915 or AMD® Quick Sync Video 1.0 or newer.1. Field of the Invention
The present invention relates to a method for forming a dielectric layer, and more particularly to a method for forming a dielectric layer to simultaneously form a silicon nitride layer and an ozone barrier layer.
2. Description of the Prior Art
As a technology of the electric field effect transistor is evolved to the next generation, a three dimensional stacking structure, such as a fin-type field effect transistor (FinFET) or a tri-gate transistor, is used to increase the density of the electronic components in the chips. The fin-type field effect transistor does not use the traditional doped polysilicon gates. Instead, the silicon fins are used as the conducting gate to replace the polysilicon gate. Because the fin-type field effect transistor does not need to form a doping region, the doping regions having bird’s-beak effect and junction leakage can be avoided. However, due to the complete absence of a spacer, it is harder to make the doping regions within the channel region. In addition, the dopants diffused into the substrate have a greater effect on the carrier mobility and the device performance.
In order to increase the performance of the fin-type field effect transistor, the spacer-less multi-gate fin transistor (FinFET) is proposed. This technology decreases the process complexity and the cost of forming an FIN structure. An additional fin structure is formed on the side-wall of the active fin, the performance of the fin-type field effect transistor is enhanced.
A conventional method to form a three dimensional stacking structure (FinFET) is disclosed in U.S. Pat. No. 8,234,254, in which the U.S. Pat. No. 8,234,254 proposes a method for forming a MOS gate with a gate die
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